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Forced oscillation events have become a challenging problem with the increasing penetration of renewable and other inverter-based resources (IBRs), especially when the forced oscillation frequency coincides with the dominant natural oscillation frequency. A severe forced oscillation event can deteriorate power system dynamic stability, damage equipment, and limit power transfer capability. This paper proposes a two-dimension scanning forced oscillation grid vulnerability analysis method to identify areas/zones in the system that are critical to forced oscillation. These critical areas/zones can be further considered as effective actuator locations for the deployment of forced oscillation damping controllers. Additionally, active power modulation control through IBRs is also proposed to reduce the forced oscillation impact on the entire grid. The proposed methods are demonstrated through a case study on a synthetic Texas power system model. The simulation results demonstrate that the critical areas/zones of forced oscillation are related to the areas that highly participate in the natural oscillations and the proposed oscillation damping controller through IBRs can effectively reduce the forced oscillation impact in the entire system. 

The development of integrated semiconductor lasers has miniaturized traditional bulky laser systems, enabling a wide range of photonic applications. A progression from pure III-V based lasers to III-V/external cavity structures has harnessed low-loss waveguides in different material systems, leading to significant improvements in laser coherence and stability. Despite these successes, however, key functions remain absent. In this work, we address a critical missing function by integrating the Pockels effect into a semiconductor laser. Using a hybrid integrated III-V/Lithium Niobate structure, we demonstrate several essential capabilities that have not existed in previous integrated lasers. These include a record-high frequency modulation speed of 2 exahertz/s (2.0 × 10¹⁸Hz/s) and fast switching at 50 MHz, both of which are made possible by integration of the electro-optic effect. Moreover, the device co-lases at infrared and visible frequencies via the second-harmonic frequency conversion process, the first such integrated multi-color laser. Combined with its narrow linewidth and wide tunability, this new type of integrated laser holds promise for many applications including LiDAR, microwave photonics, atomic physics, and AR/VR.